Density of states of a donor impurity in a GaAs quantum box under the action of an applied electric field

被引：0
|
作者：
Montes, A [1 ]
Duque, CA
Porras-Montenegro, N
机构：
[1] Univ Antioquia, Dept Fis, Medellin 1226, Colombia
[2] Univ Valle, Dept Fis, Cali 25360, Colombia
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2000年 / 220卷 / 01期
关键词：
D O I：
10.1002/1521-3951(200007)220:1<181::AID-PSSB181>3.0.CO;2-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We calculate the density of states of a donor impurity in a GaAs quantum box under the action of an electric field using effective-mass approximation within a variational scheme. We analyze the behavior of the density of states as a function of the quantum box-size as well as a function of the intensity of the applied electric field, and compare our results with previous reports in quantum wells and quantum well-wires. We expect these results will be of importance in the understanding of experimental absorption spectra related with donor impurities in GaAs quantum boxes under the action of external electric fields.
引用
收藏
页码：181 / 185
页数：5
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