HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application

被引:1
作者
Yang, CW
Fang, YK [1 ]
Chen, SF
Wang, MF
Hou, TH
Lin, YM
Yao, LG
Chen, SC
Liang, MS
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan 70101, Taiwan
[2] Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan
关键词
D O I
10.1049/el:20030445
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Poly-Si gated NMOSFETs, with HfO2/HfSixOy gate stacks for CMOS low-power application are reported for the first time. Compared to an SiO2 control sample, the HfO2/HfSixOy stack with equivalent oxide thickness of about 18 Angstrom exhibits four-orders of magnitude reduction in gate leakage at V-g = 1V Additionally, negligible hysteresis and comparable subthreshold swing are observed indicating good interface quality and bulk film properties. Furthermore, the stack-caused inherent transconductance degradation is small; almost 66% of the normalised peak transconductance with respect to SiO2 can be reached.
引用
收藏
页码:692 / 694
页数:3
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