Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

被引：0

作者：

Gill, K ^{[1
]}

Azevedo, C ^{[1
]}

Batten, J ^{[1
]}

Cervelli, G ^{[1
]}

Grabit, R ^{[1
]}

Jensen, F ^{[1
]}

Troska, J ^{[1
]}

Vasey, F ^{[1
]}

机构：

[1] CERN, Div EP, CH-1211 Geneva 23, Switzerland

来源：

FIFTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of thermally accelerated ageing in irradiated and unirradiated 1310nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80 degreesC. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment.

引用

页码：429 / 436

页数：8

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