Monitoring of intermixing and interdiffusion by x-ray diffraction of ion-implanted quantum-well structures

被引：2

作者：

Karla, I

Hogg, JHC

Hagston, WE

Fatah, J

Shaw, D

机构：

[1] Department of Applied Physics, University of Hull

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.361093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intermixing (and associated interdiffusion) resulting from ion implantation of argon ions into Cd1-xMnxTe quantum-well structures has been investigated. The experimental value of the mixing parameter of 1.5x10(3) Angstrom/eV is large compared with the values reported for this parameter in metallic superlattices, and is consistent with an appreciable degree of inter diffusion accompanying the implantation process. (C) 1996 American Institute of Physics.

引用

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页码：1898 / 1902

页数：5

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