Pressure effect on the electrical resistance of SrSi2

被引：13

作者：

Imai, Motoharu ^{[1
]}

Naka, Takashi ^{[1
]}

Abe, Hideki ^{[1
]}

Furubayashi, Takao ^{[1
]}

机构：

[1] Adv Elect Mat Ctr, Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

INTERMETALLICS | 2007年 / 15卷 / 07期

关键词：

silicides; various; electrical resistance and other electrical properties;

D O I：

10.1016/j.intermet.2006.11.005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrical resistance measurements at temperatures ranging from 4.2 to 300 K and pressures ranging from 0 to 3.6 GPa indicate that pressurization reduces the energy gap E-g with a pressure coefficient, dE(g)/dP, of -8.8(4) meV/GPa. The deformation potential of E-g is estimated to be 0.50(2) eV, which is smaller than that of tetrahedrally bonded semiconductors, such as Si (1.46 eV). The reduction of E-g by pressurization is qualitatively consistent with the results of a previously reported calculation [Imai Y, Watanabe A. Intermetallics 2006;14:666]. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：956 / 960

页数：5

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