Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains

被引：35

作者：

Haghgoo, S. ^{[1
,2
]}

Cubukcu, M. ^{[1
,2
]}

von Bardeleben, H. J. ^{[1
,2
]}

Thevenard, L. ^{[1
,2
]}

Lemaitre, A. ^{[3
]}

Gourdon, C. ^{[1
,2
]}

机构：

[1] CNRS, UMR 7588, Inst Nanosci Paris, F-75015 Paris, France

[2] Univ Paris 06, INSP, UMR 7588, Paris, France

[3] Alcatel Alsthom Rech, Route Nozay, CNRS, Lab Photon & Nanostruct,UPR 20, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 04期

关键词：

MOTION;

D O I：

10.1103/PhysRevB.82.041301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The incorporation of phosphorus into (Ga,Mn)As epilayers allows for the tuning of the magnetic easy axis from in-plane to perpendicular-to-plane without the need for a (Ga,In)As template. For perpendicular easy axis, using magneto-optical imaging a self-organized pattern of up- and down-magnetized domains is observed. Combining Kerr microscopy, magnetometry, and ferromagnetic resonance spectroscopy, the exchange constant and the domain wall width parameter are obtained as a function of temperature. The former quantifies the effective Mn-Mn ferromagnetic interaction. The latter is a key parameter for domain wall dynamics. The comparison with results obtained for (Ga, Mn)As/(Ga,In)As reveals the improved quality of the (Ga,Mn)As(1-y)P(y) layers regarding domain wall pinning, an increase in the domain wall width parameter and of the effective Mn-Mn spin coupling.

引用

页数：4

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