Sub-band-gap photoconductivity in Co2+-doped ZnO

被引:30
|
作者
Johnson, Claire A. [1 ]
Kaspar, Tiffany C. [2 ]
Chambers, Scott A. [2 ]
Salley, G. Mackay [1 ,3 ]
Gamelin, Daniel R. [1 ]
机构
[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA
[2] Pacific NW Natl Lab, Richland, WA 99352 USA
[3] Wofford Coll, Dept Phys, Spartanburg, SC 29303 USA
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 12期
基金
美国国家科学基金会;
关键词
DILUTED MAGNETIC SEMICONDUCTORS; OPTICAL-ABSORPTION; QUANTUM DOTS; NANOCRYSTALS; SPECTROSCOPY; CRYSTALS; ELECTRODES; SPECTRA; CO2+;
D O I
10.1103/PhysRevB.81.125206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Variable-temperature and polarized scanning photoconductivity measurements on Zn1-xCoxO epitaxial films allow description of sub-band-gap Co2+-derived photoionization excited states in this archetypal diluted magnetic oxide. Low-temperature (27 K) measurements demonstrate spontaneous ionization from the photogenerated T-4(1)(P) d-d excited state, despite the highly localized nature of this excitation. Ionization involves relaxation from this d-d state to the lower Co2+/3+ donor-type photoionization level. Variable-temperature photoconductivity measurements reveal an additional thermally assisted ionization process that enhances the d-d photoconductivity at higher temperatures. The energy barrier to thermal ionization from the T-4(1)(P) excited state at low temperatures is estimated to be E-a approximate to 43 meV.
引用
收藏
页数:5
相关论文
共 50 条
  • [41] Surface photovoltage in semiconductors under sub-band-gap illumination: continuous distribution of surface states
    Szaro, L
    Rebisz, J
    Misiewicz, J
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (04): : 409 - 413
  • [42] Visible thermal emission from sub-band-gap laser excited cerium dioxide particles
    Robinson, RD
    Spanier, JE
    Zhang, F
    Chan, SW
    Herman, IP
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) : 1936 - 1941
  • [43] Co2+-doped flatband optical fiber attenuator
    Morishita, Y
    Matsuyama, E
    Nouchi, K
    Noro, H
    Tanaka, K
    OPTICS LETTERS, 2001, 26 (11) : 783 - 785
  • [44] Gold-Hyperdoped Germanium with Room-Temperature Sub-Band-Gap Optoelectronic Response
    Gandhi, Hemi H.
    Pastor, David
    Tran, Tuan T.
    Kalchmair, S.
    Smilie, L. A.
    Mailoa, Jonathan P.
    Milazzo, Ruggero
    Napolitani, Enrico
    Loncar, Marco
    Williams, James S.
    Aziz, Michael J.
    Mazur, Eric
    PHYSICAL REVIEW APPLIED, 2020, 14 (06)
  • [45] Sub-band-gap impact ionization events in transient regimes of floating body SOI devices
    Ionescu, AM
    Chovet, A
    MICROELECTRONIC ENGINEERING, 1999, 48 (1-4) : 371 - 374
  • [46] Electron-transfer reaction of oxygen species on TiO2 nanoparticles induced by Sub-band-gap illumination
    Komaguchi, Kenji
    Maruoka, Takanori
    Nakano, Haruka
    Imae, Ichiro
    Ooyama, Yousuke
    Harima, Yutaka
    Journal of Physical Chemistry C, 2010, 114 (02): : 1240 - 1245
  • [47] Surface photovoltage in semiconductors under sub-band-gap illumination: continuous distribution of surface states
    L. Szaro
    J. Rębisz
    J. Misiewicz
    Applied Physics A, 1999, 69 : 409 - 413
  • [48] Improvement to the Carrier Transport Properties of CdZnTe Detector Using Sub-Band-Gap Light Radiation
    Luo, Xiangxiang
    Zha, Gangqiang
    Xu, Lingyan
    Jie, Wanqi
    SENSORS, 2019, 19 (03)
  • [49] Sub-band-gap impact ionization events in transient regimes of floating body SOI devices
    Ionescu, A.M.
    Chovet, A.
    Microelectronic Engineering, 1999, 48 (01): : 371 - 374
  • [50] LIMITATIONS OF THE INTEGRATED SUB-BAND-GAP ABSORPTION FOR DETERMINING THE DENSITY OF DEFECTS IN AMORPHOUS-SILICON
    NOBILE, G
    MCMAHON, TJ
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 578 - 580