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Sub-band-gap photoconductivity in Co2+-doped ZnO
被引:30
|作者:
Johnson, Claire A.
[1
]
Kaspar, Tiffany C.
[2
]
Chambers, Scott A.
[2
]
Salley, G. Mackay
[1
,3
]
Gamelin, Daniel R.
[1
]
机构:
[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA
[2] Pacific NW Natl Lab, Richland, WA 99352 USA
[3] Wofford Coll, Dept Phys, Spartanburg, SC 29303 USA
来源:
PHYSICAL REVIEW B
|
2010年
/
81卷
/
12期
基金:
美国国家科学基金会;
关键词:
DILUTED MAGNETIC SEMICONDUCTORS;
OPTICAL-ABSORPTION;
QUANTUM DOTS;
NANOCRYSTALS;
SPECTROSCOPY;
CRYSTALS;
ELECTRODES;
SPECTRA;
CO2+;
D O I:
10.1103/PhysRevB.81.125206
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Variable-temperature and polarized scanning photoconductivity measurements on Zn1-xCoxO epitaxial films allow description of sub-band-gap Co2+-derived photoionization excited states in this archetypal diluted magnetic oxide. Low-temperature (27 K) measurements demonstrate spontaneous ionization from the photogenerated T-4(1)(P) d-d excited state, despite the highly localized nature of this excitation. Ionization involves relaxation from this d-d state to the lower Co2+/3+ donor-type photoionization level. Variable-temperature photoconductivity measurements reveal an additional thermally assisted ionization process that enhances the d-d photoconductivity at higher temperatures. The energy barrier to thermal ionization from the T-4(1)(P) excited state at low temperatures is estimated to be E-a approximate to 43 meV.
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