High efficiency InGaAs solar cells on Si by InP layer transfer

被引：67
作者：
Zahler, James M.
Tanabe, Katsuaki [1 ]
Ladous, Corinne
Pinnington, Tom
Newman, Frederick D.
Atwater, Harry A.
机构：
[1] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA
[2] Aonex Technol, Pasadena, CA 91106 USA
[3] Emcore Photovolta, Albuquerque, NM USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 01期
关键词：
Solar cells;
D O I：
10.1063/1.2753751
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InP/Si substrates were fabricated through wafer bonding and helium-induced exfoliation of InP, and InGaAs solar cells lattice matched to bulk InP were grown on these substrates using metal-organic chemical-vapor deposition. The photovoltaic characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epiready InP substrates, thus providing a demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications. (c) 2007 American Institute of Physics.
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页数：3
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