PA-MBE grown p-n (p-ZnO:(As plus Sb)/n-GaN) and p-i-n (p-ZnO:As/HfO2/n-GaN) heterojunctions as a highly selective UV detectors

Zinc oxide is a promising candidate for application in UV photodetectors due to the large direct band gap and the high absorption coefficient in the UV. The high quality p-n and p-i-n structures consist of single or dual acceptor doped ZnO:(As, Sb) films grown by MBE, thin HfO2 layer grown by ALD method and n-type GaN templates. The As and Sb concentrations is 10(20) cm(-3). The maximum forward-to-reverse current ratio IF/IR in the obtained p-n diodes is of about 10(5) at +/- 4 V and in the case of p-i-n diodes is of about 10 6, which are very good results for this type of heterojunctions. The UV photodetectors are highly selective. The maximum of the detection wavelength was found at about 365 nm (FWHM of the photocurrent peak is similar to 17 nm). In the case of p-i-n detectors, the maximum of detection was found at 376, 360, and 341 nm. Additionally, it is possible to control the detection range by the applied reverse voltage. The dark to light current ratio in both cases is similar to 10(4).