Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)

被引：177

作者：

Vailionis, A

Cho, B

Glass, G

Desjardins, P

Cahill, DG

Greene, JE

机构：

[1] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA

[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.85.3672

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The two-dimensional (2D) to three-dimensional (3D) morphological transition in strained Ge layers grown on Si(001) is investigated using scanning tunneling microscopy. The initial step takes place via the formation of 2D islands which evolve into small (similar or equal to 180 Angstrom) 3D islands with a height to base diameter ratio of similar or equal to0.04, much smaller than the 0.1 aspect ratio of (105)-faceted pyramids which had previously been assumed to be the initial 3D islands. The "prepyramid" Ge islands have rounded bases with steps oriented along (110) and exist only over a narrow range of Ge coverages, 3.5-3.9 monolayers.

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页码：3672 / 3675

页数：4

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