ITO/AgNW/ITO stacked flexible electrodes

被引：0

作者：

Hsu, Ching-Ming ^{[1
]}

Tsai, Su-Hui ^{[1
]}

Huang, Yan-Yee ^{[1
]}

Wu, Wen-Tuan ^{[1
]}

机构：

[1] Southern Taiwan Univ Sci & Technol, Dept Optoelect Engn, Tainan, Taiwan

来源：

2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2018年

关键词：

ITO; AgNW; mechanical flexibility; THIN-FILM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study demonstrated that the use of a ITO/AgNW/ITO stacked structure could considerably enhance the mechanical flexibility of a transparent conducting oxide while minimizing AgNWs caused rough surface morphology. The bending test showed the electrical resistance variation of the stacked film could reach 1% much lower than that of the initial ITO of 32%. The top ITO also improve the adhesion of AgNWs on ITO. Optimization on the thickness of AgNWs and top ITO layer is necessary for better optical and surface morphological characteristics.

引用

页码：435 / 437

页数：3

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