NO2 gas sensing studies:: Impact of geometrical and physical characteristics of ohmic contacts on n-InP epitaxial sensitive layer

被引:2
|
作者
Berry, L. [1 ]
Brunet, J. [1 ]
Varenne, C. [1 ]
Mazet, L. [1 ]
Pauly, A. [1 ]
Wierzbowska, K. [1 ]
机构
[1] Univ Clermont Ferrand, CNRS, UMR 6602, LASMEA, F-63177 Aubiere, France
来源
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2007年 / 27卷 / 04期
关键词
gas sensor; InP; ohmic contacts; nitrogen dioxide;
D O I
10.1016/j.msec.2006.06.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper deals with the influence of technological process steps on electrical and metrological parameters of NO2 gas sensors. The NO2 gas sensors are based on thin n-InP epitaxial layers. The NO2 gas action makes the resistance of the device, measured in parallel to the surface between ohmic contacts, increase. It is demonstrated that the methodology of fabrication modifies the geometrical and the physical parameters of ohmic contacts and the reproducibility of the devices. The impact on the gas sensors in response to NO2 is also discussed. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:654 / 658
页数:5
相关论文
共 19 条
  • [1] Role of interface states and depletion layer in NO2 sensing mechanism of n-InP epitaxial layers
    Wierzbowska, K.
    Adamowicz, B.
    Lauron, B.
    Bideux, L.
    SENSORS AND ACTUATORS A-PHYSICAL, 2012, 181 : 43 - 50
  • [2] Studies of gas sensing, electrical and chemical properties of n-InP epitaxial surfaces
    Wierzbowska, K.
    Pauly, A.
    Adamowicz, B.
    Bideux, L.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (09): : 2281 - 2286
  • [3] NO2 sensitivity of thin n-InP epitaxial layers
    Talazac, L.
    Blanc, J.P.
    Battut, V.
    Mollot, F.
    Electron Technology (Warsaw), 2000, 33 (01): : 213 - 216
  • [4] NO2 detection by a resistive device based on n-InP epitaxial layers
    Talazac, L
    Blanc, JP
    Germain, JP
    Pauly, A
    SENSORS AND ACTUATORS B-CHEMICAL, 1999, 59 (2-3) : 89 - 93
  • [5] Rigorous analysis of electronic properties and AFM studies of oxidising gas sensitive n-InP epitaxial layers
    Wierzbowska, K.
    Adamowicz, B.
    Lauron, B.
    Pauly, A.
    Bideux, L.
    PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
  • [6] Study of the electrical and structural characteristics of Al/Pt ohmic contacts on n-type ZnO epitaxial layer
    Kim, HK
    Adesida, I
    Kim, KK
    Park, SJ
    Seong, TY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (04) : G223 - G226
  • [7] Ohmic contacts of ZnO/SnO2 equal-cosubstituted In2O3 films to n-InP and p-GaAs
    Tang, Xiufeng
    Hseih, Chunhan
    Ou, Fang
    Ho, Seng-Tiong
    RSC ADVANCES, 2015, 5 (119): : 98194 - 98202
  • [8] Effects of oxygen gas in the sputtering process of the WO3 sensing layer on NO2 sensing characteristics of the FET-type gas sensor
    Jeong, Yujeong
    Hong, Seongbin
    Jung, Gyuweon
    Shin, Wonjun
    Lee, Chayoung
    Park, Jinwoo
    Kim, Donghee
    Lee, Jong -Ho
    SOLID-STATE ELECTRONICS, 2023, 200
  • [9] Studies of NO2 Gas-Sensing Characteristics of a Novel Room-Temperature Surface-Photovoltage Gas Sensor Device
    Kwoka, Monika
    Szuber, Jacek
    SENSORS, 2020, 20 (02)
  • [10] Improved Hydrogen Gas Generation Rate of n-GaN Photoelectrode with SiO2 Protection Layer on the Ohmic Contacts from the Electrolyte
    Liu, Shu-Yen
    Sheu, J. K.
    Tseng, Chun-Kai
    Ye, Jhao-Cheng
    Chang, K. H.
    Lee, M. L.
    Lai, W. C.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (02) : B266 - B268