Growth of non-polar a-plane AlN on r-plane sapphire

被引：26
|
作者：
Jo, Masafumi [1 ]
Hirayama, Hideki [1 ]
机构：
[1] RIKEN, 2-1 Hirosawa, Wako, Saitama 3510198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期
关键词：
LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; GAN; TEMPERATURE; BLUE;
D O I：
10.7567/JJAP.55.05FA02
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth of non-polar AlN is crucial to the realization of polarization-free light-emitting diodes in deep UV range. The aim of this study was to investigate the growth condition for obtaining a flat a-plane AlN on r-plane sapphire. A thin AlN layer grown at lower temperature played an important role in protecting the sapphire surface. Both high temperature and low V/III ratio were necessary in terms of enhanced adatom diffusion, leading to the formation of a flat AlN buffer. (C) 2016 The Japan Society of Applied Physics
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页数：3
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