Two-phonon-resonance terahertz quantum cascade laser based on GaN/AlGaN material system

被引：3

作者：

Li, Jinfeng ^{[1
,2
]}

Wan, Ting ^{[1
,2
]}

Chen, Changshui ^{[1
,2
]}

机构：

[1] South China Normal Univ, Sch Informat Optoelect Sci & Engn, Guangdong Prov Key Lab Nanophoton Funct Mat & Dev, Guangzhou 510006, Guangdong, Peoples R China

[2] South China Normal Univ, Sch Informat Optoelect Sci & Engn, Guangzhou Key Lab Special Fiber Photon Devices, Guangzhou 510006, Guangdong, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 07期

关键词：

two-phonon-resonance; terahertz quantum cascade laser; GaN/AlGaN material system; MU-M; OPTICAL-PROPERTIES; RATE-EQUATIONS; WELLS; POLARIZATION; TEMPERATURE; SIMULATION; SCATTERING; DESIGN;

D O I：

10.1088/1361-6641/ab1401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a two-phonon-resonance terahertz quantum cascade laser (THz QCL) based on GaN/AlGaN material system is proposed. GaN/AlGaN material system is first studied in two-phonon-resonance active region structure by using rate equations. The active region adds an energy state above the upper laser state. The energy state difference between additional state and the upper laser state is equal to the longitudinal optical phonon energy which has a large magnitude (similar to 90 meV). The simulation results show that the proposed THz QCL can get better optical properties compared with the traditional three-level active region building in the same material system and has the superiority in improving electronic utilization. The results also show that two-phonon-resonance THz QCL based on GaN/AlGaN material system can gain the peak output power of 8 mW at the temperature of 230 K.

引用

页数：7

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