Effect of Al2O3 Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

被引：15

作者：

Hu, Shiben ^{[1
]}

Ning, Honglong ^{[1
]}

Lu, Kuankuan ^{[1
]}

Fang, Zhiqiang ^{[2
]}

Tao, Ruiqiang ^{[1
]}

Yao, Rihui ^{[1
]}

Zou, Jianhua ^{[1
]}

Xu, Miao ^{[1
]}

Wang, Lei ^{[1
]}

Peng, Junbiao ^{[1
]}

机构：

[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

[2] South China Univ Technol, State Key Lab Pulp & Paper Engn, Guangzhou 510640, Guangdong, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Copper; aluminum oxide; a-IZO; Schottky contact; mobility; THIN-FILM TRANSISTORS; GALLIUM-ZINC-OXIDE; PERFORMANCE; RESISTANCE;

D O I：

10.1109/JEDS.2018.2820003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a high mobility amorphous indium-zinc-oxide (a-IZO) thin film transistor (TFT) based on copper (Cu) source/drain electrodes (S/D) and aluminum oxide (Al2O3) passivation layer (PVL). The mechanism of high mobility for the a-IZO TFT based on Cu S/D with Al2O3 PVL was proposed and experimentally demonstrated. The sputtering of Al2O3 PVL induced a highly conductive channel layer due to the formation of In-rich layer on the back channel. Also, Cu S/D presented Schottky contact behavior compared with Mo S/D which behaved like Ohmic contact. Because the Schottky contact can block leakage current and the highly conductive channel achieved high on-current, the a-IZO TFT based on Cu S/D and Al2O3 PVL performed remarkable saturation mobility up to 412.7 cm(2)/Vs. This paper presents a feasible way to implement high mobility TFT arrays with Cu electrodes.

引用

页码：733 / 737

页数：5

共 24 条

[1]

Brotherton S.D., 2013, Introduction to Thin Film Transistors: Physics and Technology of TFTs, DOI DOI 10.1007/978-3-319-00002-2

[2] Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs [J].