Printed Nonvolatile Resistive Memories Based on a Hybrid Organic/Inorganic Functional Ink

被引:7
作者
Casula, Giulia [1 ]
Tkacz-Szczesna, Beata [1 ]
Busby, Yan [1 ,2 ,3 ]
Ranoszek-Soliwoda, Katarzyna [1 ]
Tomaszewska, Emilia [1 ,3 ]
Celichowski, Grzegorz [1 ,3 ]
Grobelny, Jaroslaw [1 ,3 ]
Pireaux, Jean-Jacques [1 ]
Cosseddu, Piero [1 ]
Bonfiglio, Annalisa [1 ]
机构
[1] Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy
[2] BioNanoPark Labs Lodz Reg Pk Sci, PL-93465 Lodz, Poland
[3] Univ Lodz, Dept Mat Technol & Chem, PL-90236 Lodz, Poland
关键词
ActiveInk N1400; flexible; inkjet printing; nanoparticles; organic resistive memory; OF-THE-ART; TRANSISTORS; DEVICES; POLYMER; MATRIX; NANOPARTICLES; ELECTRONICS; TECHNOLOGY; GOLD;
D O I
10.1002/admt.201700058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic memories are increasingly being considered as promising candidates for a number of novel consumer applications, such as smart labels and smart packaging devices. Indeed, organic memories can be fabricated on highly flexible substrates at low temperatures from liquid phase, employing for instance printing techniques. In this work, a nonvolatile resistive memory element conceived for large-area processing and operation in ambient conditions is presented. In particular, a functional ink made out of an air stable organic semiconductor, namely ActivInk N1400, and gold nanoparticles (NPs) is developed and optimized for the fabrication of high performance memories through inkjet printing. The ink formulation is varied in order to explore the influence of Au NPs concentration on the switching behavior. Devices are operated in ambient conditions with reproducible memory behavior, high ON/OFF current ratios, and low programming voltages. In depth material analysis with time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy depth profiles are carried out on operated devices to shine a light on resistive switching mechanism and to determine the average gold content and its 3D distribution in stable memories.
引用
收藏
页数:9
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