Engineering multiple topological phases in nanoscale Van der Waals heterostructures: realisation of α-antimonene

被引:48
|
作者
Markl, T. [1 ]
Kowalczyk, P. J. [2 ]
Le Ster, M. [1 ]
Mahajan, V. [1 ]
Pirie, H. [1 ]
Ahmed, Z. [1 ]
Bian, G. [3 ]
Wang, X. [4 ,5 ]
Chiang, T-C [5 ]
Brown, S. A. [1 ]
机构
[1] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Dept Phys & Astron, Private Bag 4800, Christchurch 8140, New Zealand
[2] Univ Lodz, Fac Phys & Appl Informat, Dept Solid State Phys, Pomorska 149-153, PL-90236 Lodz, Poland
[3] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
[4] Nanjing Univ Sci & Technol, Coll Sci, Nanjing 210094, Jiangsu, Peoples R China
[5] Univ Illinois, Dept Phys, 1110 West Green St, Urbana, IL 61801 USA
来源
2D MATERIALS | 2018年 / 5卷 / 01期
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
topological materials; antimonene; bismuth; nanostructures; 2D materials; electronic structure; thin films; GROWTH-CHARACTERISTICS; DIRAC FERMIONS; CRYSTALS; GRAPHENE; FILMS;
D O I
10.1088/2053-1583/aa8d8e
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Van der Waals heterostructures have recently been identified as providing many opportunities to create new two-dimensional materials, and in particular to produce materials with topologically-interesting states. Here we show that it is possible to create such heterostructures with multiple topological phases in a single nanoscale island. We discuss their growth within the framework of diffusion-limited aggregation, the formation of moire patterns due to the differing crystallographies of the materials comprising the heterostructure, and the potential to engineer both the electronic structure as well as local variations of topological order. In particular we show that it is possible to build islands which include both the hexagonal beta- and rectangular alpha-forms of antimonene, on top of the topological insulator alpha-bismuthene. This is the first experimental realisation of alpha-antimonene, and we show that it is a topologically non-trivial material in the quantum spin Hall class.
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收藏
页数:6
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