X-ray absorption spectroscopy and atomic force microscopy study of bias-enhanced nucleation of diamond films

被引：39

作者：

Garcia, MM ^{[1
]}

Jimenez, I

Vazquez, L

Gomez-Aleixandre, C

Albella, JM

Sanchez, O

Terminello, LJ

Himpsel, FJ

机构：

[1] CSIC, Inst Ciencia Mat, Cantoblanco 28049, Madrid, Spain

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

[3] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 17期

关键词：

D O I：

10.1063/1.121290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The bias-enhanced nucleation of diamond on Si(100) has been studied by x-ray absorption near-edge spectroscopy (XANES) and atomic force microscopy, two techniques well suited to characterize nanometric crystallites. Diamond nuclei of similar to 15 nm are formed after 5 min of bias-enhanced treatment. The number of nuclei and its size increases with the time of application of the bias voltage. A nanocrystalline diamond film is attained after 20 min of bias-enhanced nucleation. At the initial nucleation stages, the Si substrate appears covered with diamond crystallites and graphite, without SiC being detected by XANES. (C) 1998 American Institute of Physics.

引用

页码：2105 / 2107

页数：3

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