Study on the temperature effect of magnetoresistance in organic device Co/Alq3/La1-xSrxMnO3 (LSMO)

被引：3

作者：

Qin Wei ^{[1
]}

Zhang Yu-Bin ^{[1
]}

Xie Shi-Jie ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

ACTA PHYSICA SINICA | 2010年 / 59卷 / 05期

基金：

中国国家自然科学基金;

关键词：

organic spintronics; polaron; temperature; magnetoresistance; GIANT MAGNETORESISTANCE; SPIN INJECTION; MAGNETIC-FIELD; TRANSPORT;

D O I：

10.7498/aps.59.3494

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

According to the latest experiments about the temperature effect of organic magnetoresistance, we employed a drift-diffusion equation and take into account the temperature influence on mobility and spin relaxation to investigate spin polarization and magnetoresistance of the organic semiconductor device. We found that the magnetoresistance in low temperature region decreases faster than that in high temperature region. The change of magnetoresistance with temperature is mainly dependent on spin relaxation time of organic layer. Finally, the theoretical calculation was compared with experimental data and consistency between them was obtained.

引用

页码：3494 / 3498

页数：5

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