Beamforming Lens Antenna on a High Resistivity Silicon Wafer for 60 GHz WPAN

被引:46
作者
Lee, Woosung [1 ]
Kim, Jaeheung [1 ]
Cho, Choon Sik [2 ]
Yoon, Young Joong [1 ]
机构
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[2] Korea Aerosp Univ, Sch Elect Telecommun & Comp Engn, Gyeonggi Do 412791, South Korea
关键词
60 GHz WPAN; lens antenna; Rotman lens; wafer-scale; ROTMAN LENS; RF MEMS; DESIGN; SUBSTRATE;
D O I
10.1109/TAP.2009.2039331
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Wafer-scale beamforming lenses for future IEEE802.15.3c 60 GHz WPAN applications are presented. An on-wafer fabrication is of particular interest because a beamforming lens can be fabricated with sub-circuits in a single process. It means that the beamforming lens system would be compact, reliable, and cost-effective. The Rotman lens and the Rotman lens with antenna arrays were fabricated on a high-resistivity silicon (HRS) wafer in a semiconductor process, which is a preliminary research to check the feasibility of a Rotman lens for a chip scale packaging. In the case of the Rotman lens only, the efficiency is in the range from 50% to 70% depending on which beam port is excited. Assuming that the lens is coupled with ideal isotropic antennas, the synthesized beam patterns from the S-parameters shows that the beam directions are -29.3 degrees, -15.1 degrees, 0.2 degrees, 15.2 degrees, and 29.5 degrees, and the beam widths are 15.37 degrees, 15.62 degrees, 15.46 degrees, 15.51 degrees, and 15.63 degrees, respectively. In the case of the Rotman lens with antenna array, the patterns were measured by using on-wafer measurement setup. It shows that the beam directions are -26.6 degrees -21.8 degrees, 0 degrees, 21.8 degrees, and 26.6 degrees. These results are in good agreement with the calculated results from ray-optic. Thus, it is verified that the lens antenna implemented on a wafer can be feasible for the system-in-package (SiP) and wafer-level package technologies.
引用
收藏
页码:706 / 713
页数:8
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