Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors

被引：12

作者：

Casterman, D. ^{[1
]}

De Souza, M. M. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 06期

关键词：

electron mobility; Green's function methods; hafnium compounds; high-k dielectric thin films; MOSFET; permittivity; INVERSION-LAYERS; MONTE-CARLO; SCATTERING; GATE; TRANSPORT; ELECTRONS; MOSFETS; SILICON; MODEL;

D O I：

10.1063/1.3319558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An efficient numerical method for the evaluation of the Green's function used in the calculation of the Coulomb-limited electron mobility in high-kappa metal oxide semiconductor field effect transistors is presented. This simple method is applicable to gate stacks with an arbitrary number of layers of varying dielectric permittivity. A charge profile with varying dielectric profile is demonstrated to show an increase in Coulomb-limited mobility of 16% in comparison to a point charge located at the interface. A metal gate reduces the scattering potential due to its infinite dielectric constant which leads to lesser impact of charge in comparison to a polysilicon gate. The Coulomb-limited mobility for devices having identical equivalent oxide thickness of 0.5-0.8 nm with (a) a hafnium silicate interfacial layer (IL) and (b) zero IL is presented.

引用

页数：10

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