X-ray topographic characterization of epitaxially grown diamond film

X-ray double crystal diffraction topography of homoepitaxial diamond film grown by microwave plasma chemical vapor deposition has been conducted to study the residual stress generated by the lattice mismatch and defects at the film-substrate interface. Even though the stress-relaxation mechanism occurs by uniform film cracking, and there is no bending effect, a relatively large strain (Delta d/d=8.7 x 10(-4)) still remains. Based on the X-ray topographic observation, a strain distribution model with alternate unstrained and tensioned regions is suggested. (C) 1998 Elsevier Science S.A.