Operando hard X-ray photoelectron spectroscopy study of the Pt/Ru/PbZr0.52Ti0.48O3 interface

被引：12

作者：

Gueye, Ibrahima ^{[1
,2
]}

Le Rhun, Gwenael ^{[1
,2
]}

Renault, Olivier ^{[1
,2
]}

Cooper, David ^{[1
,2
]}

Ceolin, Denis ^{[3
]}

Rueff, Jean-Pascal ^{[3
]}

Barrett, Nicholas ^{[4
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

[3] Synchrotron SOLEIL, BP 48, F-91192 Gif Sur Yvette, France

[4] Univ Paris Saclay, CNRS, CEA, SPEC, F-91191 Gif Sur Yvette, France

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 03期

关键词：

THIN-FILMS; PHOTOEMISSION; SOL;

D O I：

10.1063/1.4993909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used hard X-ray photoelectron spectroscopy to probe the Pt/Ru/PbZr0.52Ti0.48O3 (PZT) interface in a Pt/Ru/PZT (220 nm)/Pt/TiO2/SiO2/Si stack. A customized sample-holder allows in-situ photoemission analysis while applying bias to the capacitor. Hard X-rays probe the buried interface between the top electrode and the ferroelectric PZT. The use of operando conditions reveals a polarization-dependent electronic response, most probably due to imperfect screening of the depolarizing field. There is evidence for an additional core level component related to the electrode-PZT interface. Zr oxide nanostructures at the surface of the sol-gel layer may form a ferroelectric dead layer at the interface, affecting device performance. Published by AIP Publishing.

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页数：4

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