X-ray micrographic imaging system based on COTS CMOS sensors

被引：16

作者：

Alcalde Bessia, Fabricio ^{[1
,2
,4
,5
]}

Perez, Martin ^{[1
,2
,4
]}

Lipovetzky, Jose ^{[1
,2
,4
,5
]}

Alejandra Piunno, Natalia ^{[5
]}

Mateos, Horacio ^{[4
]}

Sidelnik, Ivan ^{[3
,4
,5
]}

Jeronimo Blostein, Juan ^{[3
,4
,5
]}

Sofo Haro, Miguel ^{[1
,2
,4
,5
]}

Gomez Berisso, Mariano ^{[1
,2
,4
,5
]}

机构：

[1] CNEA, Ctr Atom Bariloche, Lab Bajas Temp, Av Bustillo 9500, San Carlos De Bariloche, Rio Negro, Argentina

[2] CNEA, Ctr Atom Bariloche, Div Fis Med, Av Bustillo 9500, San Carlos De Bariloche, Rio Negro, Argentina

[3] CNEA, Ctr Atom Bariloche, Div Fis Neutrones, Av Bustillo 9500, San Carlos De Bariloche, Rio Negro, Argentina

[4] Inst Balseiro, Av Bustillo 9500, San Carlos De Bariloche, Rio Negro, Argentina

[5] Consejo Nacl Invest Cient & Tecn, Buenos Aires, DF, Argentina

来源：

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2018年 / 46卷 / 10期

关键词：

CMOS; CMOS image sensors; radiation measurement; VLSI; X-ray applications;

D O I：

10.1002/cta.2502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the use of commercial off the shelf CMOS image sensors for the acquisition of X-ray images with high spatial resolution. The X-ray images, with application in biology, electronic components inspection, and paleontology research, are obtained with 8-keV photons from a Cu tube. The quantum efficiency of the detector is estimated using attenuation lengths of photons in the sensor and compared to traditional scintillator conversion layers. The spatial resolution observed with the sensor is limited by the charge redistribution produced after photon interaction with Si.

引用

页码：1848 / 1857

页数：10

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