Theoretical Determination of Optimal Material Parameters for ZnCdTe/ZnCdSe Quantum Dot Intermediate Band Solar Cells

被引：4

作者：

Imperato, C. M. ^{[1
]}

Ranepura, G. A. ^{[1
]}

Deych, L. I. ^{[1
,2
]}

Kuskovsky, I. L. ^{[1
,2
]}

机构：

[1] CUNY Queens Coll, Dept Phys, 65-30 Kissena Blvd, Queens, NY 11367 USA

[2] CUNY, Phys Program, Grad Ctr, 365 5th Ave, New York, NY 10016 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 08期

基金：

美国国家科学基金会;

关键词：

Intermediate band solar cells; type-II quantum dots; ZnCdSe; ZnCdTe; self-consistent variational method; interfacial layer; OPTICAL-PROPERTIES; EFFICIENCY; ENERGY; STRAIN; WELLS; FILMS; CDSE;

D O I：

10.1007/s11664-018-6241-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intermediate band solar cells (IBSCs) are designed to enhance the photovoltaic efficiency significantly over that of a single-junction solar cell as determined by the Shockley-Queisser limit. In this work we present calculations to determine parameters of type-II Zn1-xCdxTe/Zn1-yCdySe quantum dots (QDs) grown on the InP substrate suitable for IBSCs. The calculations are done via the self-consistent variational method, accounting for the disk form of the QDs, presence of the strained ZnSe interfacial layer, and under conditions of a strain-free device structure. We show that to achieve the required parameters relatively thick QDs are required. Barriers must contain Cd concentration in the range of 35-44%, while Cd concentration in QD can vary widely from 0% to 70%, depending on their thickness to achieve the intermediate band energies in the range of 0.50-0.73 eV. It is also shown that the results are weakly dependent on the barrier thickness.

引用

页码：4325 / 4331

页数：7

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