Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

被引：22
作者：
Li Li
Fang Liang [1 ]
Chen Ximing
Liu Gaobin
Liu Jun
Yang Fengfan
Fu Guangzong
Kong Chunyang
机构：
[1] Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
[2] Chongqing Normal Univ, Dept Phys, Chongqing 400047, Peoples R China
[3] Chongqing Univ Posts & Telecommun, Coll Photo Elect Engn, Chongqing 400065, Peoples R China
来源：
RARE METALS | 2007年 / 26卷 / 03期
基金：
中国博士后科学基金;
关键词：
AZO thin films; structure; optical and electrical properties; annealing; transmittance spectra; electrical resistivity;
D O I：
10.1016/S1001-0521(07)60210-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 degrees C, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10(4) Omega-cm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
引用
收藏
页码：247 / 253
页数：7
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