Effect of SOI substrate on silicon nitride resistance switching using MIS structure

被引：9

作者：

Mavropoulis, A. ^{[1
]}

Vasileiadis, N. ^{[1
,2
]}

Theodorou, C. ^{[3
]}

Sygellou, L. ^{[4
]}

Normand, P. ^{[1
]}

Sirakoulis, G. Ch. ^{[2
]}

Dimitrakis, P. ^{[1
]}

机构：

[1] NCSR Demokritos, Inst Nanosci & Nanotechnol, Aghia Paraskevi 15341, Greece

[2] Democritus Univ Thrace, Dept Elect & Comp Engn, Xanthi 67100, Greece

[3] Univ Savoie Mt Blanc, Univ Grenoble Alpes, CNRS, Grenoble INP,IMEP LAHC, F-38000 Grenoble, France

[4] FORTH ICE HT, Inst Chem Engn Sci, Patras, Patras 26504, Greece

来源：

SOLID-STATE ELECTRONICS | 2022年 / 194卷

关键词：

Resistance switching; Silicon nitride; SOI; RRAM; ReRAM;

D O I：

10.1016/j.sse.2022.108375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is presented. The RS characteristics are compared with the same devices previously fabricated on bulk silicon.

引用

页数：4

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