Effect of SOI substrate on silicon nitride resistance switching using MIS structure

被引：9

作者：

Mavropoulis, A. ^{[1
]}

Vasileiadis, N. ^{[1
,2
]}

Theodorou, C. ^{[3
]}

Sygellou, L. ^{[4
]}

Normand, P. ^{[1
]}

Sirakoulis, G. Ch. ^{[2
]}

Dimitrakis, P. ^{[1
]}

机构：

[1] NCSR Demokritos, Inst Nanosci & Nanotechnol, Aghia Paraskevi 15341, Greece

[2] Democritus Univ Thrace, Dept Elect & Comp Engn, Xanthi 67100, Greece

[3] Univ Savoie Mt Blanc, Univ Grenoble Alpes, CNRS, Grenoble INP,IMEP LAHC, F-38000 Grenoble, France

[4] FORTH ICE HT, Inst Chem Engn Sci, Patras, Patras 26504, Greece

来源：

SOLID-STATE ELECTRONICS | 2022年 / 194卷

关键词：

Resistance switching; Silicon nitride; SOI; RRAM; ReRAM;

D O I：

10.1016/j.sse.2022.108375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is presented. The RS characteristics are compared with the same devices previously fabricated on bulk silicon.

引用

页数：4

共 41 条

[11] Effect of grain boundary phase on contact damage resistance of silicon nitride ceramics
Lee, CS
Lee, KS
Lee, SW
Kim, DK
ADVANCED SI-BASED CERAMICS AND COMPOSITES, 2005, 287 : 421 - 426
[12] Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
S. Duen~as
R. Pela´ez
E. Casta´n
R. Pinacho
L. Quintanilla
J. Barbolla
I. Ma´rtil
E. Redondo
G. Gonza´lez-Di´az
Journal of Materials Science: Materials in Electronics, 1999, 10 : 373 - 377
[13] Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters
Patrick RJ Wilson
Tyler Roschuk
Kayne Dunn
Elise N Normand
Evgueni Chelomentsev
Othman HY Zalloum
Jacek Wojcik
Peter Mascher
Nanoscale Research Letters, 6
[14] The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD
Verlaan, V.
Verkerk, A. D.
Arnoldbik, W. M.
van der Werf, C. H. M.
Bakker, R.
Houweling, Z. S.
Romijn, I. G.
Borsa, D. M.
Weeber, A. W.
Luxembourg, S. L.
Zeman, M.
Dekkers, H. F. W.
Schropp, R. E. I.
THIN SOLID FILMS, 2009, 517 (12) : 3499 - 3502
[15] A study of the effect of the structure of plasma-chemical silicon nitride on its masking properties
V. I. Garmash
V. I. Egorkin
V. E. Zemlyakov
A. V. Kovalchuk
S. Yu. Shapoval
Semiconductors, 2015, 49 : 1727 - 1730
[16] Effect of design parameters on the efficiency of the solar cells fabricated using SOI structure
Lee, KM
Lee, SH
Kim, YK
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 75 (3-4) : 439 - 449
[17] A study of the effect of the structure of plasma-chemical silicon nitride on its masking properties
Garmash, V. I.
Egorkin, V. I.
Zemlyakov, V. E.
Kovalchuk, A. V.
Shapoval, S. Yu.
SEMICONDUCTORS, 2015, 49 (13) : 1727 - 1730
[18] Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure
Katash, Netanel
Khateeb, Salman
Malka, Dror
MICROMACHINES, 2022, 13 (10)
[19] Effect of 2 MHz frequency power applied to the substrate for low-temperature silicon nitride thin film deposition
Ahn, Sejin
Hong, Sung Jae
Yang, Ho Sik
Cho, Sung Min
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 143
[20] Simulation study on physical parameters ruling unipolar resistance switching of sputter-deposited silicon oxide film on Si substrate
Omura, Yasuhisa
Mallik, Abhijit
SOLID-STATE ELECTRONICS, 2023, 206

← 1 2 3 4 5 →