Electronic band structure of SiC polytypes

被引：0
作者：
Lambrecht, WRL
Limpijumnong, S
Segall, B
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent progress in the study of the band structures of polytypes of SiC is presented, including a study of some rhombohedral polytypes and a detailed discussion of the locations of the conduction-band minima and the effective mass tensor anisotropies in 6H and 4H SiC.
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页码：263 / 268
页数：6
相关论文
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