High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes

被引：45

作者：

Candini, Andrea ^{[1
]}

Martini, Leonardo ^{[1
,2
]}

Chen, Zongping ^{[3
]}

Mishra, Neeraj ^{[4
]}

Convertino, Domenica ^{[4
,5
]}

Coletti, Camilla ^{[4
,6
]}

Narita, Akimitsu ^{[3
]}

Feng, Xinliang ^{[7
,8
]}

Muellen, Klaus ^{[3
]}

Affronte, Marco ^{[1
,2
]}

机构：

[1] CNR, Ist Nanosci, Ctr S3, Via G Campi 213-A, I-41125 Modena, Italy

[2] Univ Modena & Reggio Emilia, Dipartimento Sci Fis Matemat & Informat, Via G Campi 213-A, I-41125 Modena, Italy

[3] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany

[4] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy

[5] Scuola Normale Super Pisa, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy

[6] Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy

[7] Tech Univ Dresden, Ctr Adv Elect Dresden Cfaed, D-01062 Dresden, Germany

[8] Tech Univ Dresden, Dept Chem & Food Chem, D-01062 Dresden, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2017年 / 121卷 / 19期

关键词：

CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL GRAPHENE; CARBON NANOTUBES; PHOTODETECTORS; PHOTOTRANSISTORS; HETEROJUNCTIONS; MOS2; GAIN;

D O I：

10.1021/acs.jpcc.7b03401

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ultranarrow graphene nanoribbons (GNRs) with atomically precise structures are considered a promising class of materials for the realization of optoelectronic and photonic devices with improved functionalities. Here we report the optoelectronic characterization of a field-effect transistor device made of a layer of bottom-up synthesized GNRs contacted with multilayer graphene electrodes, showing high photoresponsivity of 5 x 10(5) A/W for small incident power in the visible-UV range. Our results show that combining the properties of intrinsic graphene with that of semiconducting GNRs is a viable route to realize novel devices for optoelectronic and sensing applications.

引用

页码：10620 / 10625

页数：6

共 37 条

[1] Bottom-up graphene nanoribbon field-effect transistors [J].

Bennett, Patrick B. ;

Pedramrazi, Zahra ;

Madani, Ali ;

Chen, Yen-Chia ;

de Oteyza, Dimas G. ;

Chen, Chen ;

Fischer, Felix R. ;

Crommie, Michael F. ;

Bokor, Jeffrey .

APPLIED PHYSICS LETTERS, 2013, 103 (25)

[2] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[3]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/NPHOTON.2010.186, 10.1038/nphoton.2010.186]

[4]

Cai JM, 2014, NAT NANOTECHNOL, V9, P896, DOI [10.1038/NNANO.2014.184, 10.1038/nnano.2014.184]

[5] Atomically precise bottom-up fabrication of graphene nanoribbons [J].

Cai, Jinming ;

Ruffieux, Pascal ;

Jaafar, Rached ;

Bieri, Marco ;

Braun, Thomas ;

Blankenburg, Stephan ;

Muoth, Matthias ;

Seitsonen, Ari P. ;

Saleh, Moussa ;

Feng, Xinliang ;

Muellen, Klaus ;

Fasel, Roman .

NATURE, 2010, 466 (7305) :470-473

[6] Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum [J].

Candini, Andrea ;

Richter, Nils ;

Convertino, Domenica ;

Coletti, Camilla ;

Balestro, Franck ;

Wernsdorfer, Wolfgang ;

Klaeui, Mathias ;

Affronte, Marco .

BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2015, 6 :711-719

[7] Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping [J].

Castellanos-Gomez, Andres ;

Buscema, Michele ;

Molenaar, Rianda ;

Singh, Vibhor ;

Janssen, Laurens ;

van der Zant, Herre S. J. ;

Steele, Gary A. .

2D MATERIALS, 2014, 1 (01)

[8] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[9]

Chen YC, 2015, NAT NANOTECHNOL, V10, P156, DOI [10.1038/NNANO.2014.307, 10.1038/nnano.2014.307]

[10] Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration [J].

Chen, Zongping ;

Zhang, Wen ;

Palma, Carlos-Andres ;

Rizzini, Alberto Lodi ;

Liu, Bilu ;

Abbas, Ahmad ;

Richter, Nils ;

Martini, Leonardo ;

Wang, Xiao-Ye ;

Cavani, Nicola ;

Lu, Hao ;

Mishra, Neeraj ;

Coletti, Camilla ;

Berger, Reinhard ;

Klappenberger, Florian ;

Klaui, Mathias ;

Candini, Andrea ;

Affronte, Marco ;

Zhou, Chongwu ;

De Renzi, Valentina ;

del Pennino, Umberto ;

Barth, Johannes V. ;

Raeder, Hans Joachim ;

Narita, Akimitsu ;

Feng, Xinliang ;

Muellen, Klaus .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2016, 138 (47) :15488-15496

← 1 2 3 4 →