Growth of ZnO films by MOVPE using diisopropylzinc and alcohols

被引：10

作者：

Fujita, Y ^{[1
]}

Nakai, R ^{[1
]}

机构：

[1] Shimane Univ, Interdisciplinary Fac Sci & Engn, Dept Elect & Control Syst Engn, Matsue, Shimane 6908504, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

characterization; metalorganic vapor phase epitaxy; oxides; zinc compounds; semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2004.08.124

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO films have been grown on a-plane sapphire substrates by metalorganic vapor-phase epitaxy using diisopropylzinc as a zinc source and iso-propanol or tertiary-butanol as oxygen sources. The growth temperature and pressure were 300-500degreesC and 76 Torr, respectively. The samples were characterized by photoluminescence, Hall-effect measurements, X-ray diffraction and Raman spectroscopy. When tertiary butanol was used as the oxygen source under high VI/II conditions, distinctive peaks were observed at 3.29 eV and 1550 cm(-1) in the photoluminescence and Raman spectra, respectively. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：795 / 799

页数：5

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