L-band High-Power GaN-on-Si HEMT Amplifier

被引：0

作者：

Gryglewski, Daniel ^{[1
]}

Wisniewski, Marcin ^{[1
]}

Wojtasiak, Wojciech ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Radiolectron & Multimedia Technol, Warsaw, Poland

来源：

2020 23RD INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2020) | 2020年

关键词：

GaN HEMT; Si substrate; microwave power amplifier; thermal impedance;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the paper RF performances and thermal features of GaN HEMTs grown on Si substrate for the design of microwave high-power amplifiers have been briefly presented referring also to the state of the art of the dominant GaN-on-SiC HEMT technology. As GaN-on-Si HEMT application examples driver and final stage amplifiers with high-voltage NPT2018 and NPT2022 transistors made by MACOM were designed and experimentally verified. The amplifiers operate over a 1.2 GHz to 1.4 GHz frequency range with saturated output power nearly 42 dBm and 51 dBm, respectively, at the power added efficiency more than 60%.

引用

页码：411 / 415

页数：5

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