Nitrogen substitution effect on hydrogen adsorption properties of Ti-decorated benzene

被引:8
作者
Tavhare, Priyanka [1 ]
Chaudhari, Ajay [2 ]
机构
[1] Inst Sci, Dept Phys, 15 Madam Cama Rd, Mumbai 400032, Maharashtra, India
[2] Govt Vidarbha Inst Sci & Humanities, Dept Phys, Amravati 444604, India
关键词
Hydrogen adsorption; Nitrogen-substituted benzene; Desorption temperature; PDOS; TRANSITION-METAL; MOLECULAR-HYDROGEN; UPTAKE CAPACITY; STORAGE; HETEROATOMS; FULLERENE; GRAPHENE;
D O I
10.1007/s11224-019-01340-x
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ab initio calculations are performed to study hydrogen storage properties of Ti-doped benzene and Ti-doped nitrogen-substituted benzene complexes. Two of the carbon atoms in benzene are replaced by two nitrogen atoms. Two nitrogen atoms are substituted either at 1-2, 1-3, or 1-4 positions of a benzene ring and named as BN1-2Ti, BN1-3Ti, and BN1-4Ti, respectively. Maximum four, four, three, and four H-2 molecules get adsorbed on C6H6Ti, BN1-2Ti, BN1-3Ti, and BN1-4Ti complexes respectively with respective H-2 uptake capacity of 6.02, 5.84, 4.45, and 5.84 wt%. The positive Gibbs free energy corrected H-2 adsorption energy values obtained for all these complexes at ambient conditions indicate that the formation of these complexes at room temperature is thermodynamically favorable. Temperature- and pressure-dependent adsorption energy calculations show that the H-2 adsorption on all these complexes is feasible over a wide range of temperature and pressure. The gap between the highest occupied molecular orbitals (HOMO) and lowest unoccupied molecular orbital (LUMO) is found to be greater than 5 eV for all the complexes indicating stability of these complexes. The H-2 molecules interact more strongly with Ti-doped nitrogen-substituted benzene than the Ti-doped benzene that results in higher H-2 desorption temperature obtained using van 't Hoff equation for the former than the latter. The density of states plots have been used to understand the H-2 adsorption mechanism.
引用
收藏
页码:2151 / 2158
页数:8
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