Large Area Integration of Embedded High Power RF Amplifiers in a Thin Organic Panel

被引：2

作者：

Wegener, Andrew ^{[1
]}

Fulton, Caleb ^{[1
]}

Gregory, Jonathan ^{[1
]}

Chappell, William ^{[1
]}

机构：

[1] Purdue Univ, W Lafayette, IN 47906 USA

来源：

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年

关键词：

GaN MMICs; s-band; digital array radar; power amplifiers;

D O I：

10.1109/MWSYM.2009.5165818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The advent of highly efficient wide band-gap Monolithic Microwave Integrated Circuits (MMICs) allows for low cost packaging of amplifiers with antennas in a single multilayer panel. This paper reports on the design, fabrication, and measurement of a panelized Transmit/Receive (T/R) array designed for a Digital Array Radar (DAR) at 3.3 GHz. This panel uses simplified plastic packaging for high performance Gallium Nitride (GaN) amplifiers to remove heat in a very simple and effective manner. This integration approach is shown to keep the high power amplifiers cool enough to maintain optimal performance and transmit an instantaneous power of over 25 watts per element.

引用

页码：801 / 804

页数：4