SiC pressure sensors radiation hardness investigations

Radiation investigations of SiC-based pressure sensors were carried out. It was experimentally shown that these devices are more thermal stable and radiation hard as compared to the Si-based pressure sensors. It is connected with the basic physical properties of SiC such as wide bandgap, high thermal conductivity etc. The theoretical investigations were performed to explain the experimentally measured radiation hardness of SiC pressure bridge under dose rate, total dose and neutron flux irradiation. The good agreement between theoretical and experimental data confirms the high potential of SiC devices for harsh applications.