Growth and properties of SiC on-axis homoepitaxial layers

被引：11

作者：

Hassan, J. ^{[1
]}

Bergman, J. P. ^{[1
]}

Palisaitis, J. ^{[1
]}

Henry, A. ^{[1
]}

McNally, P. J. ^{[2
]}

Anderson, S. ^{[1
]}

Janzen, E. ^{[1
]}

机构：

[1] Linkoping Univ Technol, IFM, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Dublin City Univ, Nanomat Proc Lab, Dublin, Ireland

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

on-axis epitaxy; basal plane dislocations; high growth rate; graphene; growth mechanism;

D O I：

10.4028/www.scientific.net/MSF.645-648.83

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Homoepitaxial growth has been performed on 3 '' Si-face on-axis 4H-SiC substrates using standard gas system in a horizontal Hot-wall chemical vapor deposition system. Substrate surface damages are found to act as preferential nucleation sites for 3C inclusions also, the surface morphology after in-situ etching is found to largely influence the polytype stability in the epilayer. Different in-situ etching conditions were studied where Si-rich conditions are found to be better. Growth parameters and starting growth conditions are refined to obtain stable polytype in the epilayer. High quality homoepitaxial layers with 100% 4H-SiC are obtained on 3 '' substrates. Different optical and structural techniques are used to characterize the layers and to understand the growth mechanisms. The layers are found to be of high quality and no epitaxial defects typically found on off-axis epitaxial layers are observed. A high surface roughness is observed in these layers, however higher growth rate significantly lowers the surface roughness without affecting the polytype stability in the epilayer.

引用

页码：83 / +

页数：2

共 6 条

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