Photodetectors based on amorphous and micro crystalline silicon

被引:15
作者
Stiebig, H. [1 ]
Moulin, E. [1 ]
Rech, B. [1 ]
机构
[1] Inst Photovolta, Res Ctr Julich, D-52425 Julich, Germany
关键词
detectors; thin-film silicon; stability; dynamic properties; damp heat test;
D O I
10.1016/j.tsf.2006.11.126
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
p-i-n diodes based on amorphous and microcrystalline silicon are used for different applications like sensors or solar cells. However, their long-term stability and dynamic behavior are still under discussion. Therefore, the optical properties of both types of diodes were investigated by a comparative study. The long-term stability of non-encapsulated devices was tested by means of light soaking, damp heat testing and high-temperature treatment of up to 2000 It. The dynamic properties of the thin-film silicon photodetectors were studied by measuring and analysing the admittance under different bias conditions. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:7522 / 7525
页数:4
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