Benchmarking Electrolyte-Gated Monolayer MoS2 Field-Effect Transistors in Aqueous Environments

被引:5
作者
Ruehl, Steffen [1 ,2 ]
Heyl, Max [1 ,2 ]
Gaerisch, Fabian [1 ,2 ]
Blumstengel, Sylke [1 ,2 ]
Ligorio, Giovanni [1 ,2 ]
List-Kratochvil, Emil J. W. [1 ,2 ,3 ]
机构
[1] Humboldt Univ, Dept Chem, Dept Phys, Zum Grossen Windkanal 2, D-12489 Berlin, Germany
[2] Humboldt Univ, IRIS Adlershof, Zum Grossen Windkanal 2, D-12489 Berlin, Germany
[3] Helmholtz Zentrum Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2021年 / 15卷 / 09期
关键词
electrolyte gated transistors; MoS2; sensor applications; transition metal dichalcogenides; water; LAYER MOS2; DEVICES;
D O I
10.1002/pssr.202100147
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Most electrical sensor and biosensor elements require reliable transducing elements to convert small potential changes into easy to read out current signals. Offering inherent signal magnification and being operable in many relevant environments field-effect transistors (FETs) are the element of choice in many cases. In particular, using electrolyte gating, numerous sensors and biosensors have been realized in aqueous environments. Over the past years, electrolyte-gated FETs have been fabricated using a variety of semiconducting materials, including graphene, ZnO, as well as conjugated molecules and polymers. Above all, using conducting polymers top-performing devices have been achieved. Herein, an approach to use a transition metal dichalcogenide (TMDC)-based monolayer device as a transducing element is presented. Using MoS2 monolayers, it is shown that such electrolyte-gated devices may be regarded as very promising transducing elements for sensor and biosensor applications, enabled by their high sensitivity for environmental changes and the possibility of using the naturally occurring sulfur vacancies as grafting points of biorecognition layers. Furthermore, the behavior of such a device under prolonged operation in a dilute biologically relevant electrolyte such as phosphate buffered saline solution (PBS) is reported.
引用
收藏
页数:5
相关论文
共 29 条
[1]   Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics [J].
Bisri, Satria Zulkarnaen ;
Shimizu, Sunao ;
Nakano, Masaki ;
Iwasa, Yoshihiro .
ADVANCED MATERIALS, 2017, 29 (25)
[2]   Ultralow contact resistance in electrolyte-gated organic thin film transistors [J].
Braga, Daniele ;
Ha, Mingjing ;
Xie, Wei ;
Frisbie, C. Daniel .
APPLIED PHYSICS LETTERS, 2010, 97 (19)
[3]   Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays [J].
Chee, Sang-Soo ;
Lee, Won-June ;
Jo, Yong-Ryun ;
Cho, Min Kyung ;
Chun, DongWon ;
Baik, Hionsuck ;
Kim, Bong-Joong ;
Yoon, Myung-Han ;
Lee, Kayoung ;
Ham, Moon-Ho .
ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (11)
[4]   Charge-transfer-based Gas Sensing Using Atomic-layer MoS2 [J].
Cho, Byungjin ;
Hahm, Myung Gwan ;
Choi, Minseok ;
Yoon, Jongwon ;
Kim, Ah Ra ;
Lee, Young-Joo ;
Park, Sung-Gyu ;
Kwon, Jung-Dae ;
Kim, Chang Su ;
Song, Myungkwan ;
Jeong, Yongsoo ;
Nam, Kee-Seok ;
Lee, Sangchul ;
Yoo, Tae Jin ;
Kang, Chang Goo ;
Lee, Byoung Hun ;
Ko, Heung Cho ;
Ajayan, Pulickel M. ;
Kim, Dong-Ho .
SCIENTIFIC REPORTS, 2015, 5 :8052
[5]   Potential modulations in flatland: near-infrared sensitization of MoS2 phototransistors by a solvatochromic dye directly tethered to sulfur vacancies [J].
Dalgleish, Simon ;
Reissig, Louisa ;
Shuku, Yoshiaki ;
Ligorio, Giovanni ;
Awaga, Kunio ;
List-Kratochvil, Emil J. W. .
SCIENTIFIC REPORTS, 2019, 9 (1)
[6]   Insight on the Characterization of MoS2 Based Devices and Requirements for Logic Device Integration [J].
de la Rosa, Cesar J. Lockhart ;
Arutchelvan, Goutham ;
Radu, Iuliana ;
Lin, Dennis ;
Huyghebaert, Cedric ;
Heyns, Marc ;
De Gendt, Stefan .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (11) :Q3072-Q3081
[7]   Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers [J].
Desai, Sujay B. ;
Madhvapathy, Surabhi R. ;
Amani, Matin ;
Kiriya, Daisuke ;
Hettick, Mark ;
Tosun, Mahmut ;
Zhou, Yuzhi ;
Dubey, Madan ;
Ager, Joel W., III ;
Chrzan, Daryl ;
Javey, Ali .
ADVANCED MATERIALS, 2016, 28 (21) :4053-4058
[8]   Electric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorate [J].
Fathipour, Sara ;
Pandey, Pratyush ;
Fullerton-Shirey, Susan ;
Seabaugh, Alan .
JOURNAL OF APPLIED PHYSICS, 2016, 120 (23)
[9]   Low-voltage electric-double-layer MoS2 transistor gated via water solution [J].
Guo, Junjie ;
Jiang, Jie ;
Yang, Bingchu .
SOLID-STATE ELECTRONICS, 2018, 150 :8-15
[10]   Thermally Activated Gold-Mediated Transition Metal Dichalcogenide Exfoliation and a Unique Gold-Mediated Transfer [J].
Heyl, Max ;
Burmeister, David ;
Schultz, Thorsten ;
Pallasch, Sebastian ;
Ligorio, Giovanni ;
Koch, Norbert ;
List-Kratochvil, Emil J. W. .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2020, 14 (11)