Bismuth zinc vanadate, BiZn2VO6: New crystal structure type and electronic structure

被引：24

作者：

Nunes, Sayonara Eliziario ^{[1
,2
]}

Wang, Chun-Hai ^{[1
]}

So, Karwei ^{[1
]}

Evans, John S. O. ^{[1
]}

Evans, Ivana Radosavljevic ^{[1
]}

机构：

[1] Univ Durham, Dept Chem, Durham DH1 3LE, England

[2] Univ Fed Sao Carlos, Dept Mat Engn, BR-13565905 Sao Carlos, SP, Brazil

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2015年 / 222卷

关键词：

Functional oxides; Photocatalysts; Powder X-ray diffraction; MAGNESIUM VANADATE; SPIN-GAP; BICU2VO6; DIFFRACTION; SYSTEM; PHOTOCATALYST; OXYPHOSPHATE; REFINEMENT; TRANSITION; BIMG2VO6;

D O I：

10.1016/j.jssc.2014.10.036

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

We report a combined experimental and computational study of the crystal structure and electronic properties of bismuth zinc vanadate, BiZn2VO6, known for its visible light photocatalytic activity. The crystal structure has been solved from laboratory powder X-ray diffraction data using the repeated minimisations from random starting values method. BiZn2VO6 adopts a new structure type, based on the following building blocks: corner- and edge-sharing ZnO4 tetrahedra, ZnO6 octahedra and VO4 tetrahedra, and Bi2O12 dimers. It is the only known member of the BiM(2)AO(6) (M=Pb, Ca, Cd, Mn, Zn, Mg, Cu; A=V, P, As) family which does not appear to be structurally closely related to others. The electronic structure of BiZn2VO6, calculated by DFT methods, shows that it is an indirect gap semiconductor with a calculated band gap of 1.6 eV, which compares favourably to the experimentally measured value of 2.4 eV. (C) 2014 Elsevier Inc. All rights reserved.

引用

页码：12 / 17

页数：6

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