Analytical model for the rectangular power-ground structure including radiation loss

被引:21
作者
Chen, RL [1 ]
Chen, J
Hubing, TH
Shi, WM
机构
[1] Univ Houston, Dept Elect & Comp Engn, Houston, TX 77204 USA
[2] Univ Missouri, Dept Elect & Comp Engn, Rolla, MO USA
[3] Intel Corp, Desktop Platform Grp, Hillsboro, OR 97124 USA
关键词
power and ground-plane noise; quality factor; radiation loss; via coupling;
D O I
10.1109/TEMC.2004.842204
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An accurate analytical model to predict via coupling within rectangular power-return plane structures is developed. Loss mechanisms, including radiation loss, dielectric loss, and conductor loss, are considered in this model. The radiation loss is incorporated into a complex propagating wavenumber as an artificial loss mechanism. The quality factors associated with three loss mechanisms are calculated and compared. The effects of radiation loss on input impedances and reflection coefficients are investigated for both high-dielectric-loss and low-dielectric-loss printed circuit boards. Measurements are performed to validate the effectiveness of this model.
引用
收藏
页码:10 / 16
页数:7
相关论文
共 21 条
[1]  
Balanis C. A., 1996, ANTENNA THEORY ANAL
[2]  
CHEN RL, 2004, MICROW OPT TECH 0420, P117
[3]  
Hammerstad E., 1975, 5th European Microwave Conference, P268
[4]  
ITOH T, 1980, IEEE T MICROW THEORY, V28, P410
[5]  
JACKSON DR, 1992, IEEE ANT PROP SOC IN
[6]  
James J R, 1981, MICROSTRIP ANTENNAS
[7]  
Kara M, 1996, MICROW OPT TECHN LET, V12, P234, DOI 10.1002/(SICI)1098-2760(199607)12:4<234::AID-MOP15>3.0.CO
[8]  
2-A
[9]   THE THIN-SUBSTRATE APPROXIMATION FOR REFLECTION FROM THE END OF A SLAB-LOADED PARALLEL-PLATE WAVEGUIDE WITH APPLICATION TO MICROSTRIP PATCH ANTENNAS [J].
KUESTER, EF ;
JOHNK, RT ;
CHANG, DC .
IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 1982, 30 (05) :910-917
[10]   High-frequency characterization of power/ground-plane structures [J].
Lei, GT ;
Techentin, RW ;
Gilbert, BK .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (05) :562-569