An analytical method to predict electromigration-induced finger-shaped void growth in SnAgCu solder interconnect

被引:28
|
作者
Yao, Yao [1 ]
Wang, Yuexing [1 ]
Keer, Leon M. [2 ]
Fine, Morris E. [3 ]
机构
[1] Northwestern Polytech Univ, Sch Mech & Civil Engn, Xian 710072, Peoples R China
[2] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
基金
中国国家自然科学基金;
关键词
Electromigration; High current density; Solder; Void; Analytical solution; ELLIPTIC INCLUSION; INSTABILITY; MOTION;
D O I
10.1016/j.scriptamat.2014.08.028
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An analytical solution to predict electromigration-induced finger-shaped void growth in SnAgCu solder interconnect is developed based on mass diffusion theory. A quantitative nonlinear relation between the void propagation velocity and the shape evolution parameter is obtained. It is found that a circular void will grow at the lowest velocity, but as it collapses to a finger-shaped void it will grow at a faster velocity that is inversely proportional to the width. The void growth velocity predicted is consistent with the experimental observation. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:7 / 10
页数:4
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