Analysis of degradation phenomenon caused by self-heating in low-temperature-processed polycrystalline silicon thin film transistors

被引：84

作者：

Inoue, S

Ohshima, H

Shimoda, T

机构：

[1] Seiko Epson Corp, Technol Platform Res Ctr, Nagano 3920293, Japan

[2] Seiko Epson Corp, Displays Operat Div, Nagano 3920293, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 11A期

关键词：

poly-Si TFT (polycrystalline-silicon thin film transistor); reliability; thin films; self-heating; temperature;

D O I：

10.1143/JJAP.41.6313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reliability of low-temperature-processed (less than or equal to425degreesC) polycrystalline-silicon thin film transistors (poly-Si TFTs) was investigated. For n-channel TFTs, the sub-threshold characteristics shifted in the positive direction when a high voltage stress was applied to them, which is particularly significant in small-size TFTs as well as in wide-channel TFTs. It was verified that the temperature of the TFTs reached over 300degreesC due to self-heating when this stress was applied. We estimate that the breaking of Si-H bonds and re-generation of dangling bonds in the channel poly-Si layers due to self-heating are responsible for the degradation phenomenon.

引用

页码：6313 / 6319

页数：7

共 19 条

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