Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si

被引：67

作者：

Krug, C

da Rosa, EBO

de Almeida, RMC

Morais, J

Baumvol, IJR

Salgado, TDM

Stedile, FC

机构：

[1] UFRGS, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil

[2] UFRGS, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.85.4120

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ultrathin films of Al2O3 deposited on Si were submitted to rapid thermal annealing ill vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 degreesC. Nuclear reaction profiling with subnanometric depth resolution evidenced mobility of O, Al, and Si species, and angle-resolved x-ray photoelectron spectroscopy revealed the formation of Si-Al-O compounds in near-surface regions, under oxidizing atmosphere at and above 700 degreesC. Under vacuum annealing all species remained essentially immobile. A model is presented based on diffusion-reaction equations capable of explaining the mobilities and reproducing the obtained profiles.

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收藏

页码：4120 / 4123

页数：4

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