Empty-space-in-silicon technique for fabricating a silicon-on-nothing structure

被引：109

作者：

Mizushima, I ^{[1
]}

Sato, T ^{[1
]}

Taniguchi, S ^{[1
]}

Tsunashima, Y ^{[1
]}

机构：

[1] Toshiba Corp, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 20期

关键词：

D O I：

10.1063/1.1324987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A promising technique to form the silicon-on-nothing structure is presented as an alternative to the silicon-on-insulator structure. A large plate-shaped empty space in silicon (ESS) below the surface of the silicon substrate can be fabricated by connecting the spherical empty spaces, which are formed by surface migration of Si on the patterned Si substrate. The ESS technique has the potential to change the microprocess for the fabrication of large-scale integrated circuits and it can be applied to various manufacturing technologies. (C) 2000 American Institute of Physics. [S0003-6951(00)00846-9].

引用

页码：3290 / 3292

页数：3

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