Low power SRAM menu for SOC application using Yin-Yang-feedback memory cell technology

被引：68

作者：

Yamaoka, M ^{[1
]}

Osada, K ^{[1
]}

Tsuchiya, R ^{[1
]}

Horiuchi, M ^{[1
]}

Kimura, S ^{[1
]}

Kawahara, T ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

2004 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2004年

关键词：

D O I：

10.1109/VLSIC.2004.1346590

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have developed the new "Yin-Yang" feedback technology for SRAM cells. This technology is applied to sixtransistor cells and four-transistor cells, which are composed of transistors with the new D2G-SOI structure. At the 65nm process node, these cells can operate at 0.7 V in massproduced LSIs under real usage conditions. Max. operating speeds are 300 MHz for the six-transistor and 200 MHz for the four-transistor cell. Leakage current of the four-transistor cell is about 1/1000 that of a conventional four-transistor cell. These cells provide a SRAM menu that allows us to optimally balance the requirements of various types of SRAM in low-power LSIs.

引用

页码：288 / 291

页数：4

共 5 条

[1]

Mizuno H, 1995, 1995 SYMPOSIUM ON VLSI CIRCUITS, P25, DOI 10.1109/VLSIC.1995.520671

[2] A 1.9-μm2 loadless CMOS four-transistor SRAM cell in a 0.18-μm logic technology [J].

Noda, K ;

Matsui, K ;

Imai, K ;

Inoue, K ;

Tokashiki, K ;

Kawamoto, H ;

Yoshida, K ;

Takeda, K ;

Nakamura, N ;

Kimura, T ;

Toyoshima, H ;

Koishikawa, Y ;

Maruyama, S ;

Saitoh, T ;

Tanigawa, T .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :643-646

[3]

Osada K., 2001, 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177), P168, DOI 10.1109/ISSCC.2001.912589

[4]

SEEVINCK E, 1987, IEEE JSSCC SC, V22

[5] 0.4-V logic library friendly SRAM array using rectangular-diffusion cell and delta-boosted-array-voltage scheme [J].

Yamaoka, M ;

Osada, K ;

Ishibashi, K .

2002 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2002, :170-173

← 1 →