Stoichiometry study of S-terminated GaAs(001)-(2 x 6) surface with synchrotron radiation photoelectron spectroscopy

被引:5
|
作者
Shimoda, M
Tsukamoto, S
Ohno, T
Koguchi, N
Sugiyama, M
Maeyama, S
Watanabe, Y
机构
[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan
[2] NTT, Basic Res Labs, Atsugi, Kanagawa 24301, Japan
关键词
synchrotron radiation photoelectron spectroscopy; surface structure; gallium arsenide; sulfur; adatoms;
D O I
10.1143/JJAP.39.3943
中图分类号
O59 [应用物理学];
学科分类号
摘要
Synchrotron radiation photoelectron spectroscopy (SRPES) has been performed to investigate the surface stoichiometry of the S-terminated GaAs(001)-(2 x 6), and in particular, to determine the chemical species of the five dimers, which are separated by missing dimers and from the unit structure of the (2 x 6) reconstruction. The S 2p photoemission spectra show a significant decrease in the peak intensity with increasing substrate temperature, whereas no significant changes are observed for the As 3d photoemission spectra The Ga 3d spectra are decomposed into a bulk component and more than one surface component, one of which is attributed to a Ga-S bond and decreases in accordance with the change observed in the S 2p spectra. These results strongly support the model that each pair of the five dimers in the (2 x 6) reconstruction consists of S-S dimers.
引用
收藏
页码:3943 / 3946
页数:4
相关论文
共 50 条
  • [21] SYNCHROTRON-RADIATION X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF HYDROGEN-TERMINATED SI SURFACES AND THEIR OXIDATION MECHANISM
    YAMAMOTO, K
    HASEGAWA, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2493 - 2499
  • [22] Synchrotron-radiation photoemission study of Ba on a Si(001)2 x 1 surface
    Cheng, CP
    Hong, IH
    Pi, TW
    PHYSICAL REVIEW B, 1998, 58 (07): : 4066 - 4071
  • [23] Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 x 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy
    Cheng, Chiu-Ping
    Chen, Wan-Sin
    Cheng, Yi-Ting
    Wan, Hsien-Wen
    Yang, Cheng-Yeh
    Pi, Tun-Wen
    Kwo, Jueinai
    Hong, Minghwei
    ACS OMEGA, 2018, 3 (02): : 2111 - 2118
  • [24] INTERACTION OF AL WITH OXIDIZED GE/SI(001) - A SYNCHROTRON-RADIATION PHOTOELECTRON-SPECTROSCOPY STUDY
    PRABHAKARAN, K
    OGINO, T
    SCIMECA, T
    OSHIMA, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (02): : 509 - 572
  • [25] Photoelectron spectroscopy study of surface alloying in the Au/Ni (s) 5(001) x (111) system
    Zafeiratos, S
    Kennou, S
    APPLIED SURFACE SCIENCE, 2001, 173 (1-2) : 69 - 75
  • [26] Soft X-ray photoelectron spectroscopy of metal-phthalocyanines on the (001) surface of GaAs and Ge
    Cabailh, G
    Holland, BN
    Stephens, C
    McGovern, IT
    McGuinness, C
    Cafolla, A
    Vearey-Roberts, AR
    Evans, DA
    JOURNAL DE PHYSIQUE IV, 2006, 132 : 11 - 15
  • [27] In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 x 1 surface by supersonic molecular oxygen beams
    Yoshigoe, Akitaka
    Teraoka, Yuden
    Okada, Ryuta
    Yamada, Yoichi
    Sasaki, Masahiro
    JOURNAL OF CHEMICAL PHYSICS, 2014, 141 (17):
  • [28] Characterization study of GaAs(001) surfaces using ion scattering spectroscopy and x-ray photoelectron spectroscopy
    Wolan, JT
    Epling, WS
    Hoflund, GB
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) : 6160 - 6164
  • [29] Synchrotron radiation spectroscopy study of FeCr2X4 (X=S and Se)
    Kang, J. -S.
    Kim, G.
    Lee, H. J.
    Kim, H. S.
    Kim, D. H.
    Han, S. W.
    Kim, S. J.
    Kim, C. S.
    Lee, Hangil
    Kim, J. -Y.
    Min, B. I.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)
  • [30] Synchrotron radiation spectroscopy study of FeCr2X4 (X=S and Se)
    Department of Physics, Catholic University of Korea, Bucheon 420-743, Korea, Republic of
    不详
    不详
    不详
    不详
    Journal of Applied Physics, 2008, 103 (07):