Thermal stability of the non-alloyed Pd/Sn and Pd/Ge ohmic contacts to n-GaAs

被引:7
作者
Islam, MS [1 ]
McNally, PJ
Cameron, DC
机构
[1] Dublin City Univ, Sch Elect Engn, Microelect Res Lab, Dublin 9, Ireland
[2] Dublin City Univ, Sch Elect Engn, Elect Mat Res Lab, Dublin 9, Ireland
关键词
thermal stability; non-alloyed Pd/Sn Ohmic contacts; non-alloyed Pd/Ge Ohmic contacts; n-GaAs;
D O I
10.1016/S0040-6090(97)00498-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel non-alloyed Ohmic contact system comprising of Pd/Sn metallization has already been developed for n-type Gallium Arsenide (n-GaAS) [1]. Thermal stability of this metallization has not been reported yet. Thermal stability of novel Pd/Sn Ohmic contact has been investigated and compared to the non-alloyed Pd/Ge metallization. Metallization samples are furnace-annealed at various temperatures and systematically characterized utilizing scanning electron microscopy (SEM) and current-voltage (I-V) measurements. Contact resistivities, rho(c), of the proposed metallizations are measured using a conventional transmission line model (cTLM) method. The Pd(50 nm)/Sn(125 nm) contacts show a lowest rho(c) of 2.28 x 10(-5) Omega cm(2) on Si-doped 2 x 10(18) cm(-3) n-GaAs after annealing at 330 degrees C for 30 min, whereas the Pd(50 nm)/Ge(126 nm) contacts exhibit a lowest rho(c) of 2.84 x 10(-6) Omega cm(2) under the same annealing condition. The Pd/Sn Ohmic contacts display superior thermal stability at 410 degrees C when compared with the Pd/Ge contacts. After annealing at 410 degrees C for 4 h, rho(c) of the Pd(50 nm)/Sn(125 nm) metallization remains in the low 10(-5) Omega cm(2) range, whereas rho(c) values increase by approximately two orders of magnitude for the Pd(50 nm)/Ge(126 nm) contacts. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:607 / 610
页数:4
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