Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory

被引：13

作者：

Song, Sannian ^{[1
]}

Song, Zhitang ^{[1
]}

Liu, Bo ^{[1
]}

Wu, Liangcai ^{[1
]}

Feng, Songlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 03期

关键词：

Thin films; Composite materials; Electrical properties; Nanocomposites; TRANSITIONS;

D O I：

10.1016/j.matlet.2009.11.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The improvement in the phase change characteristics of Ge2Sb2Te5 (GST) films for phase change random access memory (PCM) applications was investigated by doping the GST films with PbZr0.30Ti0.70O3 (PZT) using cosputtering at room temperature. The doped films showed a retarded crystallization to a higher temperature and higher resistivity in the crystalline state compared to pure GST films. Phase separation has been observed in annealed GST-PZT films and the segregated domains exhibited relatively uniform size. The reduced reset voltage of GST-PZT based cell was due to the reduced programming volume by incorporating PZT into GST. This work clearly reveals the highly promising potential of GST-PZT composite films for application in PCM. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：317 / 319

页数：3

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