Simulation of High-Efficiency Klystrons with the COM and CSM bunching

被引：4

作者：

Baikov, Andrei ^{[1
]}

Baikova, Olga ^{[2
,3
]}

机构：

[1] Moscow Univ MFUA, MFUA, Moscow, Russia

[2] Natl Res Nucl Univ MEPhI, MEPhI, Moscow, Russia

[3] FSEEP Med Coll, Moscow, Russia

来源：

2019 INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2019年

关键词：

klystron; efficiency; bunching method; simulation;

D O I：

10.1109/ivec.2019.8744768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

the two types of high effective bunching in powerful klystrons are discussed. The first bunching type, named COM, is intended for standard klystron structure with first harmonic cavities only. The second bunching type, named CSM, is realized in klystron structures which includes cavities of second and third harmonics. Both bunching types allow to reach the klystron efficiency up to 90%.

引用

页数：2

共 6 条

[1] Simulation of Conditions for the Maximal Efficiency of Decimeter-Wave Klystrons
Baikov, A. Yu.
Grushina, O. A.
Strikhanov, M. N.
[J]. TECHNICAL PHYSICS, 2014, 59 (03) : 421 - 427
[2] Baikov A. Yu, 2017, THESIS
[3] Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%
Baikov, Andrey Yu.
Marrelli, Chiara
Syratchev, Igor
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) : 3406 - 3412
[4] Constable D. A., 2017, P 18 IEEE INT VAC EL
[5] Guzilov I. A., 2014, P 10 INT VAC EL SOUR, P101
[6] Hill V., 2016, P 17 IEEE INT VAC EL, P68

← 1 →